The reasons and solutions for MOS transistor breakdown are as follows
Categories：Product knowledge Date：2024-11-16 Hits：403 View »
In actual projects, we mostly use enhanced models.
Categories：Product knowledge Date：2024-11-16 Hits：355 View »
The working principle of tunneling field-effect transistor (TFET) is interband tunneling, and its S can break through the limit of 60mV/decade. Moreover, the Ioff of TFET is very low, so the operating voltage of TFET can be further reduced.
Categories：Product knowledge Date：2024-11-16 Hits：467 View »
1. Identify pin polarity; 2. Check the quality of performance
Categories：Product knowledge Date：2024-11-16 Hits：379 View »
For unipolar TVS and bipolar TVS
Categories：Product knowledge Date：2024-11-15 Hits：347 View »
When the thyristor is damaged and needs to be inspected and analyzed for its cause, the core can be removed from the cooling jacket, the core box can be opened, and the chip can be removed to observe the traces after the damage to determine the cause. Below are several common phenomenon analyses.
Categories：Product knowledge Date：2024-11-15 Hits：441 View »
Silicon controlled rectifier (SCR) is the abbreviation for silicon controlled rectifier.
Categories：Product knowledge Date：2024-11-15 Hits：414 View »
One hot air gun, one anti-static soldering iron, one mobile phone board, one pair of tweezers, an appropriate amount of low melting point solder wire, rosin flux (flux), solder suction wire, and a suitable amount of board washing water.
Categories：Product knowledge Date：2024-11-15 Hits：336 View »
Introduce a thyristor sound source switching circuit that does not use integrated circuits, does not occupy relay contacts, has simple wiring, and is easy to expand.
Categories：Product knowledge Date：2024-11-15 Hits：349 View »
The key points for using exclusion method are as follows
Categories：Product knowledge Date：2024-11-15 Hits：351 View »
